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Kobayashi, Takuma*; Nakanuma, Takato*; Suzuki, Asato*; Sometani, Mitsuru*; Okamoto, Mitsuo*; Yoshigoe, Akitaka; Shimura, Takayoshi*; Watanabe, Heiji*
no journal, ,
Together with a standard NO nitridation, a high channel mobility ( 100 cmVs) is obtained for SiC MOSFETs fabricated on non-basal planes, such as (1-100) m-face. Since these planes appear on the side wall of trench formed on (0001) Si-face, they can be directly applied to trench MOSFETs which have low on-resistance. Despite their advantages, the characteristics of MOS devices on non-basal planes, including the impact of nitridation, is not well investigated. In this work, we focused on SiC MOS devices on m-face and studied their physical and electrical characteristics in detail.